Welcome

Efforts to promote WBG Technology by DOE

• ANANT AGARWAL (U.S. Dept. of Energy)

A World View of the Growth of SiC Power Devices

• JOHN PALMOUR (Wolfspeed) (Wolfspeed, A Cree Company)

Long Carrier Lifetime in SiC Epilayers and High-Voltage Devices

• TSUNENOBU KIMOTO (Kyoto University, Japan)

Milestones in the Growth of Silicon Carbide Crystals

• DON BARRETT (II-VI Foundation)

Evolution of SiC Substrates: A Retrospective

• DON HOBGOOD (Cree, Inc. [retired])

SiC Defects for Quantum Computing

• ADAM GALI (Wigner Research Center for Physics, Hungary)

Power Devices in 4H SiC

• JAMES COOPER (Purdue University)

Synchrotron radiation and correlated optical studies on SiC crystalline materials

• ZHE CHUAN FENG (Guangxi Univ., China)

SiC Epitaxial Growth at a Large Scale

• AL BURK (Wolfspeed)

Point Defects in SiC

• BENGT SVENSSON (University of Oslo, Norway)

Raman, Low-Temperature Photoluminescence, and Thermal Conductivity Studies of Isotopically Modified SiC

• IVAN IVANOV (Linköping University, Sweden)

SiC and GaN: A Comparison

• HADIS MORKOÇ (Virginia Commonwealth University)

SiC Biotechnology

• STEVE SADDOW (University of South Florida)

Graphene on SiC

• RANDY FEENSTRA (Carnegie Mellon University)

Epitaxial Graphene on SiC: A Material Platform for Fundamental Research and Devices

• MICHAEL KRIEGER (University of Erlangen-Nürnberg, Germany)