Wolfgang J. Choyke 90th Birthday Symposium

2 Aug 2016, 09:00 → 3 Aug 2016, 17:00 US/Eastern

University Club Ballroom B (University of Pittsburgh)

We are hosting an invitation-only mini-symposium to celebrate the 90^th Birthday of Wolfgang J. Choyke, his long career of research on silicon carbide and other fields, and the importance of Pittsburgh in the development of silicon carbide as a semiconductor for important current and future applications.

Participants who are arriving at Pittsburgh International Airport should check the Transportation link to the left. Most participants are staying at the Wyndham Pittsburgh University Center Hotel on campus, which is a few blocks from the site of the symposium in University Club Ballroom B. A map of the area is available below.

There are no symposium registration fees but participants are responsible for the costs of their hotel rooms ($145 per room per day plus incidentals). There is no charge for the Tuesday evening banquet at the University Club. As part of the symposium, continental breakfast and lunch is available in Ballroom B each day.

Please contact one of the local organizers if you have a question, or if you would like to provide testimonials or other materials!

Scientific Program Organizer: Robert P. Devaty, University of Pittsburgh, Department of Physics and Astronomy

Local Organizers: Robert Devaty (devaty@pitt.edu) and Michele Slogan (slogan@pitt.edu)

 

 

 

 

 

 

 

 

overview_map_Choyke90.pdf

restaurants Choyke90.pdf

Tuesday 2 August

09:30 → 10:00 Continental Breakfast

09:45 → 10:00 Welcome

10:00 → 10:45 Efforts to promote WBG Technology by DOE

Speaker: ANANT AGARWAL (U.S. Dept. of Energy)

10:45 → 11:05 Coffee Break

11:05 → 11:50 A World View of the Growth of SiC Power Devices

Speaker: JOHN PALMOUR (Wolfspeed) (Wolfspeed, A Cree Company)

11:50 → 12:30 Long Carrier Lifetime in SiC Epilayers and High-Voltage Devices

Speaker: TSUNENOBU KIMOTO (Kyoto University, Japan)

12:30 → 14:00 Lunch

14:00 → 14:40 Milestones in the Growth of Silicon Carbide Crystals

Speaker: DON BARRETT (II-VI Foundation)

14:40 → 15:20 Evolution of SiC Substrates: A Retrospective

Speaker: DON HOBGOOD (Cree, Inc. [retired])

15:20 → 15:40 Coffee Break

15:40 → 16:20 SiC Defects for Quantum Computing

Speaker: ADAM GALI (Wigner Research Center for Physics, Hungary)

16:20 → 17:00 Power Devices in 4H SiC

Speaker: JAMES COOPER (Purdue University)

19:00 → 21:00 Banquet

Wednesday 3 August

09:30 → 09:50 Continental Breakfast

09:50 → 10:10 Synchrotron radiation and correlated optical studies on SiC crystalline materials

Speaker: ZHE CHUAN FENG (Guangxi Univ., China)

10:10 → 10:50 SiC Epitaxial Growth at a Large Scale

Speaker: AL BURK (Wolfspeed)

10:50 → 11:10 Coffee Break

11:10 → 11:50 Point Defects in SiC

Speaker: BENGT SVENSSON (University of Oslo, Norway)

11:50 → 12:30 Raman, Low-Temperature Photoluminescence, and Thermal Conductivity Studies of Isotopically Modified SiC

Speaker: IVAN IVANOV (Linköping University, Sweden)

12:30 → 14:00 Lunch

14:00 → 14:40 SiC and GaN: A Comparison

Speaker: HADIS MORKOÇ (Virginia Commonwealth University)

14:40 → 15:20 SiC Biotechnology

Speaker: STEVE SADDOW (University of South Florida)

15:20 → 15:40 Coffee Break

15:40 → 16:20 Graphene on SiC

Speaker: RANDY FEENSTRA (Carnegie Mellon University)

16:20 → 17:00 Epitaxial Graphene on SiC: A Material Platform for Fundamental Research and Devices

Speaker: MICHAEL KRIEGER (University of Erlangen-Nürnberg, Germany)