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09:30
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--- Continental Breakfast ---
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09:45
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Welcome
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10:00
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Efforts to promote WBG Technology by DOE
-
ANANT AGARWAL (U.S. Dept. of Energy)
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10:45
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--- Coffee Break ---
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11:05
|
A World View of the Growth of SiC Power Devices
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JOHN PALMOUR (Wolfspeed)
(Wolfspeed, A Cree Company)
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11:50
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Long Carrier Lifetime in SiC Epilayers and High-Voltage Devices
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TSUNENOBU KIMOTO (Kyoto University, Japan)
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09:30
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--- Continental Breakfast ---
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09:50
|
Synchrotron radiation and correlated optical studies on SiC crystalline materials
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ZHE CHUAN FENG (Guangxi Univ., China)
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10:10
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SiC Epitaxial Growth at a Large Scale
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AL BURK (Wolfspeed)
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10:50
|
--- Coffee Break ---
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11:10
|
Point Defects in SiC
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BENGT SVENSSON (University of Oslo, Norway)
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|
11:50
|
Raman, Low-Temperature Photoluminescence, and Thermal Conductivity Studies of Isotopically Modified SiC
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IVAN IVANOV (Linköping University, Sweden)
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12:30
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--- Lunch ---
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14:00
|
Milestones in the Growth of Silicon Carbide Crystals
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DON BARRETT (II-VI Foundation)
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14:40
|
Evolution of SiC Substrates: A Retrospective
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DON HOBGOOD (Cree, Inc. [retired])
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15:20
|
--- Coffee Break ---
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15:40
|
SiC Defects for Quantum Computing
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ADAM GALI (Wigner Research Center for Physics, Hungary)
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|
16:20
|
Power Devices in 4H SiC
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JAMES COOPER (Purdue University)
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19:00
|
--- Banquet ---
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12:30
|
--- Lunch ---
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|
14:00
|
SiC and GaN: A Comparison
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HADIS MORKOÇ (Virginia Commonwealth University)
|
|
14:40
|
SiC Biotechnology
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STEVE SADDOW (University of South Florida)
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|
15:20
|
--- Coffee Break ---
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15:40
|
Graphene on SiC
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RANDY FEENSTRA (Carnegie Mellon University)
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16:20
|
Epitaxial Graphene on SiC: A Material Platform for Fundamental Research and Devices
-
MICHAEL KRIEGER (University of Erlangen-Nürnberg, Germany)
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