Speaker
Dr
Terence Garvey
(Paul Scherrer Institut)
Description
We present a provisional design of a compact synchrotron light source producing EUV radiation for application in the semiconductor industry. EUV light sources are of great potential interest for this industry. The availability of highly reflective mirrors at 13.5 nm wavelength makes EUV lithography a strong candidate for next generation semiconductor manufacture. Our design is based on a storage ring lattice employing design principles similar to those used in the new family of diffraction limited synchrotron radiation sources. The 430 MeV storage ring, of circumference 25.8 m, would have an emittance of ~ 6 nm-rad. The required EUV wavelength is obtained using a single short-period (16 mm) undulator.
Authors
Dr
Terence Garvey
(Paul Scherrer Institut)
Prof.
Leonid Rivkin
(Paul Scherrer Institut)
Dr
Andreas Streun
(Paul Scherrer Institut)
Prof.
Albin Wrulich
(Paul Scherrer Institut)
Dr
Yasin Ekinci
(Paul Scherrer Institut)
