【634】 Doping evolution of the multi-band Mott insulator Ca2RuO4

23 Aug 2017, 12:30
1h 30m
Poster Correlated-Electron Physics in Transition-Metal Oxides Poster Session

Speaker

Ms Sara Ricco (University of Geneva)

Description

High temperature superconductivity, colossal magneto-resistance and many other intriguing phenomena in correlated electron physics arise in doped Mott insulators. Here, we present the first angle-resolved photoemission (ARPES) study of electron-doped Ca$_{2}$RuO$_{4}$. The undoped parent compound of our study has been investigated intensely as a model system of a multi-band Mott transition. Our ARPES data reveal a coherent Fermi surface at doping levels as low as 0.11. In contrast to cuprates or iridates, the emergent metallic state is characterized by heavy quasiparticle bands devoid of a pseudogap. These results show that key-properties of doped cuprates and iridates, such as the momentum dependent pseudogap are not universal features of doped Mott insulators.

Author

Ms Sara Ricco (University of Geneva)

Co-authors

Dr M. Kim (CNRS, Univ Paris-Saclay) Dr A. Tamai (University of Geneva) Dr S. McKeown Walker (University of Geneva) Ms I. Cucchi (University of Geneva) Dr F. Y. Bruno (University of Geneva) Prof. A. Georges (CNRS Univ Paris-Saclay, University of Geneva) Dr R. Perry (London Centre for Nanotechnology and UCL Centre for Materials Discovery, University College London) Prof. F. Baumberger (University of Geneva)

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