Speaker
Dr
Zhe Wang
(University of Geneva)
Description
We show that large spin-orbit interactions (SOI) in graphene can be achieved with TMD substrates. SOI is firstly revealed by weak anti-localization effect, and its analysis shows the spin relaxation time is ~0.2ps for all devices, thus strongly suggesting that the induced SOI originates from a modification of the graphene band structure. This is further confirmed by the observation of beating in Shubnikov-de Haas oscillations. Quantitative analysis finds induced SOI to be around 10 meV. Both the robustness of the interfacially induced SOI and its large magnitude make graphene-on-TMD a promising system to realize and explore a variety of spin-dependent transport phenomena, such as spin-Hall and valley-Hall topological insulating states.
Authors
Dr
Zhe Wang
(University of Geneva)
Dr
D.-K. Ki
(University of Geneva)
Mr
J.-Y. Khoo
(Massachusetts Institute of Technology)
Mr
D. Mauro
(University of Geneva)
Dr
H. Berger
(EPFL)
Prof.
A.H. MacDonald
(The University of Texas and Austin)
Prof.
L.S. Levitov
(Massachusetts Institute of Technology)
Prof.
A.F. Morpurgo
(University of Geneva)
