Speaker
Ettore Zaffaroni
(Universite de Geneve (CH))
Description
Silicon detectors built in high-voltage and high-resistivity CMOS technology are an interesting options for the pixel tracker needed for the ATLAS experiment upgrade for the high luminosity LHC program. They are less expensive and easier to produce with respect to standard hybrid silicon pixel detectors. This technology must be carefully tested and characterized. One of the techniques used for this purpose is the Transient Current Technique: electron-holes pairs are produced in a precise position of the detector using a IR laser beam, allowing to probe parameters like the depletion depth of the sensor.
TCT measurements have been performed on a demonstrator chip, produced by AMS, before and after proton irradiation.
Author
Ettore Zaffaroni
(Universite de Geneve (CH))
