【665】 Orbital character of the mobile and localized electron states at the LAO/STO interface

24 Aug 2017, 17:45
15m
Talk Emergent phenomena in novel low-dimensional materials Emergent Phenomena in Novel Low-Dimensional Materials

Speaker

Alla Chikina (Swiss Light Source, Paul Scherrer Institut)

Description

Oxygen vacancies at the LAO/STO interface leave two vacant electrons, one of which stays localized at the Ti3+ ion and another joins the mobile 2DES. The localized electrons in double and higher-order configurations of the VOs may account for the interface ferromagnetism [1]. The mobile ones, coupled to phonon modes by strong e-ph interaction, form large multiphonon polarons fundamentally reducing the 2DES mobility [2]. We use resonant soft-X-ray ARPES and combined density functional (DFT) + dynamical mean field theory (DMFT) to establish orbital character of the mobile and localized electron states at the LAO/STO interface created by the VOs.

[1] F. Lechermann et al., Physical Review B, 90(8), 85125 (2014).
[2] C. Cancellieri et al., Nature Communications 7, 10386 (2016).

Authors

Alla Chikina (Swiss Light Source, Paul Scherrer Institut) M. A. Husanu (Swiss Light Source, Paul Scherrer Institut) M. Caputo (Swiss Light Source, Paul Scherrer Institut) F. Lechermann (Institut für Theoretische Physik, Universität Hamburg & Institut für Keramische Hochleistungswerkstoffe, Technische Universität Hamburg-Harburg) Vladimir N. Strocov (Swiss Light Source, Paul Scherrer Institut)

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