Recent advances in the development of radiation tolerant silicon detectors for the SLHC

by Michael Moll (CERN)

Friday 17 Jul 2009, 11:00 → 12:00 Europe/Zurich

40-S2-D01 (CERN)

Abstract: For the luminosity upgrade of the LHC, the SLHC, the inner tracking systems of the LHC experiments need to be replaced. A main concern is the extreme radiation hardness requirement of up to about 1016 fast hadrons/cm2. This presentation describes recent results on radiation hardening technologies developed within the RD50 Collaboration for the tracker upgrades. Silicon detectors have been designed and produced on n- and p-type silicon wafers made by Float Zone, epitaxy and Czochralski technology. Their charge collection efficiency after proton, neutron and mixed irradiation has been studied. Novel detector concepts, as 3D detectors, have been designed, produced and studied as well. Radiation induced microscopic defects have been also investigated with fluences of up to 1016cm-2 (integrated over SLHC run time) and correlated with the performance degradation of irradiated detectors. Detector Seminar webpage Organizer: Joachim BAECHLER / PH-DT

Slides 090717-Detector-Seminar-Moll-final.pdf