Speaker
Joern Schwandt
(Hamburg University (DE))
Description
Non-ionising energy loss of radiation produces point defects and defect cluster in silicon, which result in a significant performance degradation of detectors. In this contribution we present results of defect spectroscopy using TSC (Thermally Stimulated Current) measurements on silicon pad diodes irradiated by electrons of different energies, where significantly different ratios of point to cluster defects are expected. A new method based on SRH (Shockley-Read-Hall) statistics is introduced, which takes into account point and cluster defects and allows determining their dependence on particle energy and annealing conditions.
Authors
Joern Schwandt
(Hamburg University (DE))
Elena Donegani
(University of Hamburg)
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
Erika Garutti
(DESY)
Robert Klanner
(Hamburg University (DE))
