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1:30 PM
Photoconductivity and magnetoresistance mobility in the irradiated to 1015-1017 cm-2 neutron fluence Si
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Juozas Vaitkus
(Vilnius University)
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1:50 PM
TLM method for active doping profile evaluation
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ABDENOUR LOUNIS
(LAL ORSAY)
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2:10 PM
Study of point- and cluster-defects in radiation-damaged silicon
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Joern Schwandt
(Hamburg University (DE))
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2:30 PM
Study of the ionizing energy depositions after fast neutron interactions in silicon
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Benedikt Ludwig Bergmann
(Czech Technical University (CZ))
Stanislav Pospisil
(Institute of Experimental and Applied Physics, Czech Technical University in Prague)
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2:50 PM
Electrically active defects in 4H-SiC
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Ivana Capan
(Rudjer Boskovic Institute)
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3:10 PM
Update on NitroStrip project
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Marta Baselga Bacardit
(KIT - Karlsruhe Institute of Technology (DE))
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4:00 PM
Acceptor removal in silicon pad diodes with different resistivities
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Pedro Goncalo Dias De Almeida
(FCT Fundacao para a Ciencia e a Tecnologia (PT))
Yana Gurimskaya
(CERN)
Isidre MATEU
(CERN)
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4:20 PM
TSC Measurements of Acceptor Removal
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Yana Gurimskaya
(CERN)
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4:40 PM
Discussion
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Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
Michael Moll
(CERN)