31st RD50 Workshop (CERN)

Session

3D sensors

Nov 21, 2017, 5:40 PM

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

3D sensors

• Ivan Vila (IFCA (CSIC-UC))

35. A study of 3D Silicon pixel sensors using ROC4sens read-out chip in a DESY test beam

Esteban Curras Rivera (Universidad de Cantabria (ES))

11/21/17, 5:40 PM

A study of Silicon pixel sensors of size 50 um x 50 um fabricated at CNM using double-sided 3D technology is presented. Sensors are bump-bonded to the pixelated ROC4Sens read-out chip which exactly matches the sensor geometry. We analyze the response of two hybrid assemblies in a test beam of 5.6 GeV electrons. Results of charge collection, charge sharing, spatial resolution and efficiency are...

31. Radiation hardness of 3D pixel sensors up to full HL-LHC fluences

Joern Lange (IFAE Barcelona)

11/21/17, 6:00 PM

A new generation of CNM 3D pixel sensors with small pixel sizes of 50x50 and 25x100 $\mu$m$^{2}$ and reduced electrode distances are developed for the HL-LHC upgrade of the ATLAS pixel detector. For the first time, pixel detectors are irradiated and studied up to the unprecedented fluence of 2.5$\times10^{16} n_{eq}$/cm$^2$, i.e. for the full expected HL-LHC life time to explore the limits of...

32. 3D silicon sensors at FBK: first results on the last production

Dr Sabina Ronchin (FBK)

11/21/17, 6:20 PM

The talk will present the last batch of 3D n-on-p detectors produced by FBK-CMM designed for LHC Phase-2 Upgrade. The process was performed both on Si-Si and SOI wafers with 130 μm device thickness. Several kinds of pixel detectors, e.g., compatible with read-out chips such as FE-I4, CMS and RD53A, have been realized on wafers. We will report on the sensor technology and offer an overview of...