Conveners
Device simulation
- Gregor Kramberger (Jozef Stefan Institute (SI))
The advantages TCAD based studies offer during the development of semiconductor sensors are multiple: they are predictive, they provide insight
and they capture and visualise theoretical knowledge.
In this talk I will report on Silvaco TCAD Atlas Device simulator, in particular about the modelisation of the most fundamental semiconductor
physics parameters in that tool, the band gap energy...
TCAD simulation has become a valuable tool in the design and understanding process of silicon sensors for high energy physics applications. The predictive power is limited by the uncertainties arising from different available semiconductor physics models but also from the simulation software itself.
In this talk we will present a comparison between Silvaco and Synopsys predictions for...
The impact of the active base with a low electric field on the bulk current in Si detectors irradiated to F ≥ 1x10^15 neq/cm2, i.e. to fluences of interest for the experiments at HL-LHC was studied. The simulated profiles of the electric field E(x) and of the bulk current densities j(x) showed that active base gives different contribution to the detector current operating as electrically...
Due to internal charge multiplication, Low Gain Avalanche Detectors (LGAD) enable to produce rather thin (~ 50 µm) silicon sensors with a relatively low operating voltage. A typical P-type LGAD consists of n+-p-p–p+ layers with p-well formed by deep diffusion of boron into p– layer. Another way of p-well formation by using an epitaxial process may lead to lower sensitivity of the breakdown...
TRACS is a C++11 based software that carries out an effective calculation of the induced current over irradiated and non-irradiated silicon microstrip and pad detectors. Its new achievements and developments will be presented.
