31st RD50 Workshop (CERN)

Session

Device simulation

Nov 21, 2017, 2:00 PM

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

Device simulation

• Gregor Kramberger (Jozef Stefan Institute (SI))

19. Band gap energy modelisation in Silvaco TCAD Atlas Device simulator

Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))

11/21/17, 2:00 PM

The advantages TCAD based studies offer during the development of semiconductor sensors are multiple: they are predictive, they provide insight
and they capture and visualise theoretical knowledge.
In this talk I will report on Silvaco TCAD Atlas Device simulator, in particular about the modelisation of the most fundamental semiconductor
physics parameters in that tool, the band gap energy...

23. Radiation damage models: comparison between Silvaco and Synopsys

Julien-Christopher Beyer (Max-Planck-Institut fur Physik (DE))

11/21/17, 2:20 PM

TCAD simulation has become a valuable tool in the design and understanding process of silicon sensors for high energy physics applications. The predictive power is limited by the uncertainties arising from different available semiconductor physics models but also from the simulation software itself.
In this talk we will present a comparison between Silvaco and Synopsys predictions for...

37. Current generation in heavily irradiated Si detectors: mechanisms of the current saturation at HL-LHC fluences

Dr Elena Verbitskaya (Ioffe Institute)

11/21/17, 2:40 PM

The impact of the active base with a low electric field on the bulk current in Si detectors irradiated to F ≥ 1x10^15 neq/cm2, i.e. to fluences of interest for the experiments at HL-LHC was studied. The simulated profiles of the electric field E(x) and of the bulk current densities j(x) showed that active base gives different contribution to the detector current operating as electrically...

15. TCAD Simulation of Complementary P- and N-type Silicon Low Gain Avalanche Detectors

Juozas Vyšniauskas (Vilnius University (LT))

11/21/17, 3:00 PM

Due to internal charge multiplication, Low Gain Avalanche Detectors (LGAD) enable to produce rather thin (~ 50 µm) silicon sensors with a relatively low operating voltage. A typical P-type LGAD consists of n+-p-p–p+ layers with p-well formed by deep diffusion of boron into p– layer. Another way of p-well formation by using an epitaxial process may lead to lower sensitivity of the breakdown...

11. Progresses in LGAD simulation and comparison with experimental data from UFSD2, the new 50-micron production at FBK

Marco Mandurrino (INFN)

11/21/17, 3:20 PM

This talk aims to present extensive comparisons between measurements and numerical simulations about the UFSD2 recent production of Low-Gain Avalanche Detectors (LGAD) fabricated by FBK in Trento.
In particular, the methodological study on avalanche models and their calibration we introduced at the previous RD50 meeting, in Kraków, will be applied to the new batch of 50 micron detectors, which...

39. TRACS

Julio Calvo Pinto (CERN)

11/21/17, 4:10 PM

TRACS is a C++11 based software that carries out an effective calculation of the induced current over irradiated and non-irradiated silicon microstrip and pad detectors. Its new achievements and developments will be presented.

21. Allpix Squared - A Generic Pixel Detector Simulation Framework

Simon Spannagel (CERN)

11/21/17, 4:30 PM

Allpix Squared is a generic open-source simulation framework for pixel detectors. Its goal is to ease the implementation of detailed simulations for both single detectors and more complex setups such as beam telescopes. Predefined detector types can be automatically constructed from simple model files describing the detector parameters.

The simulation chain is arranged with the help of...

53. Discussion

Gregor Kramberger (Jozef Stefan Institute (SI))

11/21/17, 4:50 PM

56. The ALIVATA DAQ system

Salvador Marti I Garcia (IFIC-Valencia (UV/EG-CSIC)), Salvador Marti i Garcia (IFIC-Valencia (UV-CSIC))

11/21/17, 5:20 PM