Speaker
Prof.
Juozas Vaitkus
(Vilnius University)
Description
The photoconductivity and mobility of carriers was investigated in highly irradiated Si. The measurements were performed in microstrip samples at different temperature and different bias, up to high electric field regime. It was observed decrease the mobility with increase of fluence. The photoconductivity spectra demonstrated the main defects and its filling, and an increase of surface recombination with the increase of bias.
Author
Prof.
Juozas Vaitkus
(Vilnius University)
Co-authors
Dr
Algirdas Mekys
(Vilnius University)
Mr
Vilius Vertelis
(Vilnius University)
