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Description
Acceptor removal has been studied on a set of p-type sensors irradiated with protons up to 7E15 neq/cm2. Two sets of diodes were used: thin epitaxial diodes with different resistivities (10, 50, 250 and 1000 Ohm cm) and high resistivity float zone diodes with different thicknesses (100, 150, 200 and 285 um).
CV, IV and TCT measurements were performed to extract the effective doping concentration of these devices. TCT collected charge versus voltage was used to evaluate the sensor's bulk space charge.
In an annealing study on a subset of the epitaxial sensors irradiated to 7.32E+14 neq/cm2, evidence of type inversion was observed on some of the devices.
Defect spectroscopy was conducted using TSC technique in order to study the correlation between BiOi concentration and acceptor removal.
All collected data is used to revise the fitting of the Neff vs fluence plots and extract acceptor removal rate parameters.
