31st RD50 Workshop (CERN)

Study of the ionizing energy depositions after fast neutron interactions in silicon

20 Nov 2017, 14:30

20m

6/2-024 - BE Auditorium Meyrin (CERN)

Defects and material characterisation

Speakers

Benedikt Ludwig Bergmann (Czech Technical University (CZ)) Stanislav Pospisil (Institute of Experimental and Applied Physics, Czech Technical University in Prague)

Description

We present the ionizing energy depositions in a 300 $\mu$m thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-) monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We show and interpret representative measured energy spectra and, study the competition of ionizing energy losses (IEL) and non-ionizing energy losses (NIEL) by separating the IEL of the recoil silicon from energy depositions by products of nuclear reactions.
The data give supplementary information to the results of a previous measurement by Sattler and are compared with different theoretical predictions (by Norgett-Torrens and Robinson, and Akkerman and Barak).

Presentation materials

IEL_TPX-RD50-201711.pdf

IEL_TPX-RD50-201711.pptx