31st RD50 Workshop (CERN)

Session

Precision Timing Detectors

21 Nov 2017, 09:40

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

Precision Timing Detectors

• Giulio Pellegrini (Universidad de Valencia (ES))

33. Characterization of Irradiated APDs for Timing Applications

Matteo Centis Vignali (CERN)

21/11/2017, 09:40

Avalanche Photo Diodes (APDs) produced by Radiation Monitoring Devices are examined as candidate timing detectors for HL-LHC applications.
These APDs are operated at 1.8 kV, resulting in a gain of up to 500.
The timing performance of the detectors is evaluated using a pulsed laser.
The effects of radiation damage on current, signal amplitude, noise, and timing of the APDs are evaluated...

10. Characterisation of Neutron-Irradiated Deep Diffused APDs

Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES))

21/11/2017, 10:00

In view of the future HL-LHC upgrade, a variety of technologies are being considered for particle tracking. One of these technologies is Deep Diffused APDs (DD-APDs). Several DD-APDs were characterised through CV/IV and TCT measurements before and after neutron irradiation. The irradiation took place at the Jožef Stefan Institute (Ljubljana, Slovenia). The fluences to which the devices were...

30. Measurement of properties of Ultra-fast silicon detectors

Hartmut Sadrozinski (University of California,Santa Cruz (US))

21/11/2017, 10:20

We will discuss mainly gain and timing resolution of thin LGAD both before and after neutron irradiation.

57. Challenges in the design and construction of the silicon sensors for the CMS and ATLAS timing layer

Nicolo Cartiglia (INFN Torino (IT))

21/11/2017, 11:10

In the past year, the CMS and ATLAS collaborations have defined the detector geometry of their respective timing layers. Even though both collaborations have selected UFSD in their baseline design, the requirements for the two experiments differ in key aspects such as with pixel size, radiation hardness, number of layers. In this contribution we review the requirements and challenges in the...

25. New developments in Ultra Fast Silicon Detectors at FBK

Giovanni Paternoster (Fondazione Bruno KEssler)

21/11/2017, 11:30

Over the last few years, Fondazione Bruno Kessler, in collaboration with the universities of Trento and Turin, has been involved in developing of Silicon sensors with low internal gain, the so-called Ultra-FAST Silicon Detectors (UFSD). Such a detector is based on the concept of Low-Gain Avalanche Detectors (LGAD), which are silicon detectors with an internal, low multiplication mechanism...

40. Progress on AC-LGAD

Hartmut Sadrozinski (University of California,Santa Cruz (US))

21/11/2017, 11:50

AC-LGAD are LGAD with simplified structure.
Basically all segmentation in the P+, N+ and oxide are eliminated and only the AC-coupled metal contact is segmented.
We have tested with laser, beta and alpha the first prototypes from CNM Run 10478 which were produced without optimization of the doping profile and simulated the response with TCAD and SPICE. A program going forward is described.

44. Inverse-LGAD: Solving the LGAD fill factor problem

Jordi Duarte Campderros (Universidad de Cantabria (ES))

21/11/2017, 12:10

An in-deep study of a p-in-p LGAD prototype (dubbed as I-LGAD) is presented. Contrary to the conventional LGAD devices, currently proposed for the HL-LHC mip timing detectors, the I-LGAD has a non-segmented deep p-well ( the multiplication layer). Therefore, I-LGADs should idealy present a constant gain value over all the sensitive region of the device without gain drops between the signal...

52. Discussion

Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)), Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))

21/11/2017, 12:30