Conveners
Defects and material characterisation
- Michael Moll (CERN)
The photoconductivity and mobility of carriers was investigated in highly irradiated Si. The measurements were performed in microstrip samples at different temperature and different bias, up to high electric field regime. It was observed decrease the mobility with increase of fluence. The photoconductivity spectra demonstrated the main defects and its filling, and an increase of surface...
Phosphorus and Boron doped profiles of silcion wafers have been investigated to reconstruct active doping profile from Transmission line measurements. It is known that total doping profiles is accessible through Secondary Ion Mass spectrometry analysis. Here this methods enable us to determine electrical active doping profiles and see the change of this concentration after irradiation ....
Non-ionising energy loss of radiation produces point defects and defect cluster in silicon, which result in a significant performance degradation of detectors. In this contribution we present results of defect spectroscopy using TSC (Thermally Stimulated Current) measurements on silicon pad diodes irradiated by electrons of different energies, where significantly different ratios of point to...
We present the ionizing energy depositions in a 300 $\mu$m thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-) monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We show and interpret representative measured energy...
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, 600 keV H+ and 2 MeV He++ ion implantations. The Schottky barrier diodes (SBD) were formed by evaporation of nickel through a metal mask with patterned quadratic apertures of 1 mm × 1 mm, while Ohmic contacts were formed by nickel sintering at 950 °C...
Nitrogen enriched wafers have shown some improvement after irradiation. NitroStrip is an RD50 project that has fabricated p-in-n wafers with four different materials, FZ, DOFZ, nitrogen enriched and MCz. Here we will show measurements of unirradiated and some irradiated detectors.
Acceptor removal has been studied on a set of p-type sensors irradiated with protons up to 7E15 neq/cm2. Two sets of diodes were used: thin epitaxial diodes with different resistivities (10, 50, 250 and 1000 Ohm cm) and high resistivity float zone diodes with different thicknesses (100, 150, 200 and 285 um).
CV, IV and TCT measurements were performed to extract the effective doping...
