31st RD50 Workshop (CERN)

Session

CMOS

22 Nov 2017, 13:00

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

CMOS

• Gianluigi Casse (University of Liverpool (GB))

14. First results on irradiated OVERMOS1, a HR CMOS for HEP applications

Enrico Giulio Villani (STFC-Rutherford Appleton Laboratory (GB))

22/11/2017, 13:00

I will present test results of OVERMOS1, a MAPS CMOS detector based on high resistivity substrate. Following a short description of the main features of OVERMOS1 and differences with respect to previous OVERMOS incarnation, I will describe experimental results of test structures, both for standard and neutron irradiated devices, and comparisons with TCAD simulation results.

16. Charge collection in proton irradiated HV-CMOS sensors

Bojan Hiti (Jozef Stefan Institute (SI))

22/11/2017, 13:20

Active silicon sensors produced in CMOS technology are commonly manufactured on substrates of intermediate resistivity and are usually operated under partial depletion. Irradiation and consequent effective acceptor removal changes the depletion depth and therefore the amount of collected charge.
We will present a study of proton irradiation effects in the fluence range of 4e14 - 4e15 neq/cm2...

36. Irradiation tests of LF-CPIX CMOS sensor

Luigi Vigani (University of Oxford (GB))

22/11/2017, 13:40

High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which
could achieve similar performances at lower cost of production and complexity.
Studies of...

22. Edge-TCT Measurements on 180nm TowerJazz Pixel Sensor for ATLAS ITK (Talk cancelled)

Abhishek Sharma (University of Oxford (GB))

22/11/2017, 14:00

The ATLAS experiment is planning a major upgrade of its tracking detectors during the Phase-II LHC shut down, to better take advantage of the increased luminosity that will be provided by the HL-LHC. New depleted CMOS sensors are being developed for this upgrade. Preliminary results of the evaluation of TowerJazz 180nm CMOS sensors using the Edge-Transient Current Technique (Edge-TCT) are...

27. Test beam studies of monolithic HV-CMOS pixel detectors for HL-LHC

Stefano Terzo (IFAE Barcelona (ES))

22/11/2017, 14:20

Depleted Monolithic Active Pixel Sensors (DMAPS) built with High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the future pixel detector of the ATLAS Inner Tracker (ITk) at HL-LHC.

The H35Demo is a large area HV-CMOS demonstrator prototype chip developed for the ITk which features a large fill factor layout with 25x250 um^2...

28. Flourescence measurements of CMOS sensors

Susanne Kuehn (CERN)

22/11/2017, 15:10

Fluorescence measurements are one option to investigate silicon sensor properties [1]. The idea is to deploy an X-ray source pointing on a target material and leading to the emission of monochromatic X-rays. This allows to measure charge spectra and the calibration of sensors. In the presentation details on a setup recently installed will be shown and details on the commissioning given....

26. MPW submission in the 150 nm HV-CMOS technology node from LFoundry

Eva Vilella Figueras (University of Liverpool (GB))

22/11/2017, 15:30

As the HV-CMOS technology is emerging as a prime candidate for many future experiments in particle physics, it is a priority for the RD50 collaboration to develop and study particle detectors in this technology. In this context, the collaboration has started a new effort to design and manufacture dedicated test structures and matrices of HV-CMOS and HV-MAPS pixels. Two HV-CMOS submissions are...

55. Discussion

22/11/2017, 15:50