Speaker
Dr
Bo Zhang
(University of Science and Technology of China)
Description
TiZrV film should be baked to make oxygen atom diffuse from the surface passivation layer into the interior of the film. Oxygen diffusion along grain boundary plays dominant role during activation. This process was simulated and the relation between activation temperature and grain size was obtained.
Author
Dr
Bo Zhang
(University of Science and Technology of China)
Co-authors
Yong Wang
(University of Science and Technology of China)
Sihui Wang
(University of Science and Technology of China)
