17–22 Jun 2018
Europe/Zurich timezone
15th European Vacuum Conference

Selective hydrogen etching leads to 2D Bi (111) bilayers on Bi2Se3:Large Rashba splitting in topological insulator heterostructure

Not scheduled
20m
Main Lobby (CICG)

Main Lobby

CICG

Poster Surface Science & Applied Surface Science Poster Session Tuesday

Speaker

Dr Cheng-Maw Cheng (National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan)

Description

Ultrathin bilayers (BLs) of bismuth have been predicated to be a two-dimensional (2D) topological insulator. Here we report on the new route to manufacture the high quality Bi bilayers from 3D topological insulator, a top-down approach to prepare large-area and well-ordered Bi (111) BL with deliberate hydrogen etching on epitaxial Bi2Se3 films. With scanning tunneling microscopy (STM) and X-ray photoelectron spectra (XPS) in-situ, we confirm that the removal of Se from the top of a quintuple layer (QL) is the key factor, leading to a uniform formation of Bi (111) BL in the van der Waals gap between the first and second QL of Bi2Se3. The angle resolved photoemission spectroscopy (ARPES) in situ and complementary density functional theory (DFT) calculations show that a giant Rashba splitting with a coupling constant of 4.5 eV.Å in the Bi (111) BL on Bi2Se3. Moreover, the thickness of Bi BLs can be tuned by the amount of hydrogen exposure. Our ARPES and DFT study indicated that the Bi hole-like bands increase with increasing the Bi BL thickness. The selective hydrogen etching is a promising route to produce a uniform ultrathin 2D TI that is useful for fundamental investigations and applications in spintronics and valleytronics.

Primary author

Dr Cheng-Maw Cheng (National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan)

Co-authors

Dr Shu Hsuan Su (Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, Taiwan) Dr Pei Yu Chuang (Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, Taiwan) Dr Yi Tung (Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, Taiwan) Mr Sheng Wen Chen (Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, Taiwan) Mr Wei-Chuan Chen (National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan) Dr Chia-Hsin Wang (National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan) Dr Yaw-Wen Yang (National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan) Prof. Jung Chun Andrew Huang (Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, Taiwan) Prof. Tay-Rong Chang (Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, Taiwan) Dr Hsin Lin (Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore ) Prof. Horng-Tay Jeng (Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan) Dr Ku-Ding Tsuei (National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan) Dr Hai Lin Su (School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei 230009, People's Republic of China) Dr Yu Cheng Wu (School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei 230009, People's Republic of China)

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