The time-resolved analysis of the laser-induced currents on semiconductor detectors has been proven to be a chief and versatile method for the study of such detectors. So far, all these methods and techniques, named as Transient Current Techniques (TCT), are based on the single-photon absorption process where just one photon is required to create an electron-hole pair. For the first time, we will introduce here a new kind of TCT method based on the Two-Photo-Absorption (TPA) process where two photons are required for the creation of an electron-hole pair.
This innovative TPA-TCT technique makes a breakthrough with respect to the current state-of-the-art since it allows for the generation of excess carriers on a very localized micrometric-scale voxel, enabling a high-spatial-resolution and true three-dimensional characterization of the new generation of semiconductor devices with a small feature size.
This talk introduces the fundamentals of the TCT-TPA technique and its application to the radiation tolerance assessment of standard n-in-p FZ diodes, HV-CMOS and LGAD sensors.
Burkhard Schmidt (EP-DT)