Name: 33rd RD50 Workshop (CERN)
Start: 2018-11-26T00:30:00+01:00
End: 2018-11-28T16:20:00+01:00
Location: CERN

33rd RD50 Workshop (CERN)

from Monday, November 26, 2018 (12:30 AM) to Wednesday, November 28, 2018 (4:20 PM)

Monday, November 26, 2018
9:30 AM LHC Full Detector Systems
9:30 AM - 10:30 AM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

9:30 AM Welcome to the 33rd RD50 Workshop and latest RD50 news - Michael Moll (CERN)

9:40 AM Radiation Damage Monitoring and Modeling with Full Detector Systems at the LHC - Ben Nachman (Lawrence Berkeley National Lab. (US))

10:10 AM Discussion - Ben Nachman (Lawrence Berkeley National Lab. (US)) Gregor Kramberger (Jozef Stefan Institute (SI)) Michael Moll (CERN)
10:30 AM Coffee break
Coffee break
10:30 AM - 11:00 AM
Room: 6/2-024 - BE Auditorium Meyrin
11:00 AM Defects and Material Characterization
11:00 AM - 5:00 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

11:00 AM Development status of a novel proton irradiation site at the HISKP isochronous cyclotron Bonn - Pascal Wolf (University of Bonn)

11:20 AM Measurement of E_eff for Irradiated and Annealed Diodes - Felix Wizemann (Technische Universitaet Dortmund (DE))

11:40 AM Measurements of NitroStrip detectors irradiated with protons and neutrons - Jan Cedric Honig (Albert Ludwigs Universitaet Freiburg (DE))

12:00 PM Sequence Dependent Mixed Irradiations - Jan-Ole Gosewisch (KIT - Karlsruhe Institute of Technology (DE))

12:20 PM Characterization of silicon n+-p-p+ detectors with Al2O3 passivating layers grown by Atomic Layer Deposition method - Elena Verbitskaya (Ioffe Institute)

1:40 PM Electrically defects in unirradiated p-type silicon detectors fabricated by different vendors - Cristina Besleaga Stan (National Institute of Materials Physics )

2:00 PM Defect investigations in 1 MeV neutron irradiated PiN pads and LGADs - Cristina Besleaga Stan (National Institute of Materials Physics)

2:20 PM Acceptor removal project in the framework of RD50 collaboration and last TSC results on p-type Si pad diodes - Yana Gurimskaya (CERN)

2:40 PM Status of TSC measurements at Hamburg - I. Nitrogen enriched versus standard FZ material, II. Acceptor removal after irradiation with 5.5 MeV electrons - Eckhart Fretwurst (Hamburg University (DE))

3:00 PM Comparative analysis of proton and ion damages in Si detectors supplemented with SRIM simulations - Daria Mitina (Ioffe Institute)

3:20 PM Experimental Determination of Proton Hardness Factors at Various Irradiation Facilities. - Cameron James Simpson-Allsop (University of Birmingham (GB))

4:10 PM NIEL study of high energy heavy ions in silicon - Isidre Mateu (CERN)

4:30 PM Discussion - Michael Moll (CERN)
5:15 PM Collaboration Board

5:15 PM - 7:15 PM
Room: 6/2-024 - BE Auditorium Meyrin
Tuesday, November 27, 2018
9:30 AM Precision Timing Detectors
9:30 AM - 2:10 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

9:30 AM Evolution of the working conditions and time resolution of UFSD sensors during the sensor lifetime at HL-LHC - Nicolo Cartiglia (INFN Torino (IT))

9:50 AM Performances of the third UFSD production at FBK - marta tornago

10:10 AM Development in Radiation hardness study on the third FBK production of Ultra fast silicon Detectors - Marco Ferrero (Universita e INFN Torino (IT))

11:00 AM Beam Test of Deep Diffused APDs - Matteo Centis Vignali (CERN)

11:20 AM Innovative TCT studies on the breakdown of UFSD3 sensors by FBK - Federico SIviero

11:40 AM Thin LGADs characterization using Ion Beam Induced Charge (IBIC) and Time-resolved IBIC at the Centro Nacional de Aceleradores - Carmen JIMENEZ RAMOS (National Accelerator Center)

12:00 PM Annealing and Characterization of Irradiated Low Gain Avalanche Detectors - Moritz Oliver Wiehe (CERN / Albert Ludwigs Universitaet Freiburg (DE))

12:20 PM Timing performance of small cell 3D silicon detectors - Gregor Kramberger (Jozef Stefan Institute (SI))

1:40 PM Discussion - Giulio Pellegrini (Universidad de Valencia (ES)) Gregor Kramberger (Jozef Stefan Institute (SI))
2:10 PM Device Simulation
2:10 PM - 3:20 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

2:10 PM Charge collection test and TCAD simulation of OVERMOS, a CMOS 180nm MAPS detector - E. Giulio Villani (STFC Rutherford Appleton Laboratory) Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB)) Enrico Giulio Villani (STFC - Science & Technology Facilities Council (GB)) Giullio villani (Rutherford Appleton Laboratory)

2:30 PM Status on TRAMOS (Trapping MOS) and DotPix (QuantumDot Pixel) ongoing developments - Nicolas Fourches (IRFU/DEDIP/DePhyS CEA Saclay)

2:50 PM Discussion - Joern Schwandt (Hamburg University (DE)) Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR)) Marco Bomben (U. di Trieste)
3:20 PM Coffee break
Coffee break
3:20 PM - 3:50 PM
Room: 6/2-024 - BE Auditorium Meyrin
3:50 PM Characterization Techniques
3:50 PM - 5:00 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

3:50 PM Novel view on extraction of charge carrier transport parameters from classical TCT - Artem Shepelev (Ioffe Institute)

4:10 PM Characterization of semiconductor detectors using IBIC imaging method - Aneliya Karadzhinova-Ferrer (Rudjer Boskovic Institute (HR))

4:30 PM Discussion - Gregor Kramberger (Jozef Stefan Institute (SI))
8:00 PM Social Dinner

8:00 PM - 10:00 PM
Wednesday, November 28, 2018
9:30 AM Pixel and Strip Detectors
9:30 AM - 1:50 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

9:30 AM DAQ-ROC4Sens - Francisco Rogelio Palomo Pinto (ETSI-USe) Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES)) Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

9:50 AM Characterization before and after irradiation of RD53A planar pixel modules - Anna Macchiolo (Max-Planck-Institut fur Physik (DE))

10:10 AM Processing of pixel detectors on p-type MCz silicon using atomic layer deposition (ALD) grown aluminium oxide - Jennifer Ott (Helsinki Institute of Physics (FI))

11:00 AM Performance of LPNHE/FBK/INFN thin planar \textit{n-on-p} silicon pixels after HL-LHC radiation fluences - Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))

11:20 AM Test beam results of irradiated silicon sensor with modified ATLAS pixel implantations - Mareike Weers (Technische Universitaet Dortmund (DE))

11:40 AM Test beam characterization of irradiated (1E16n_eq/cm2) 3D pixel sensors readout with the RD53A ROC - Andrea Garcia Alonso (Universidad de Cantabria (ES))

12:00 PM 3D silicon sensors for ATLAS ITk pixel detector - Giulia Giannini (IFAE Barcelona)

1:20 PM Discussion - Gianluigi Casse (University of Liverpool (GB))
1:50 PM CMOS
1:50 PM - 3:20 PM
Room: 6/2-024 - BE Auditorium Meyrin
Contributions

1:50 PM Overview of design and evaluation of depleted CMOS sensors within RD50 - Eva Vilella Figueras (University of Liverpool (GB))

2:10 PM Irradiation study of CMOS pixel detector structures on RD50-MPW1 chips from LFoundry - Igor Mandic (Jozef Stefan Institute (SI))

2:30 PM Options and constraints for passive sensor fabrication at CMOS foundries - Daniel Muenstermann (Lancaster University (GB))

2:50 PM Discussion - Eva Vilella Figueras (University of Liverpool (GB))