Conveners
Defects and Material Characterization
- Michael Moll (CERN)
The development status of a novel proton irradiation site for silicon detectors is presented. The site is located at the isochronous cyclotron of the HISKP (Helmholtz Institut für Strahlen- und Kernphysik) of the University of Bonn. The cyclotron provides protons with up to 14 MeV kinetic energy with beam currents between a few nA and 1 $\mu$A. Light ions, such as deuterons, $^{3,4}$He or...
The leakage current of silicon sensors and diodes depends on temperature. To compare measurements of devices obtained at different temperatures, it is necessary to understand the dependence of the bulk current on the temperature.
Bulk current measurements are used to obtain $E_{\text{eff}}$ values for proton irradiated n$^+$-in-n diodes up to a fluence of $3 \times 10^{15} \,...
Nitrogen enrich material showed an improvement of some defects after irradiation. NitroStrip is a RD50 project that aims to compare nitrogen enriched silicon wafers with FZ, DOFZ and MCz material. This presentation will show laser measurements and electrical characterization of NitroStrip samples irradiated at different fluences with protons and neutrons.
This presentation shows CV characteristics and charge collection measurements on strip sensors and diodes after mixed irradiation with 23$\,$MeV protons and 1$\,$MeV neutrons. Samples of different material types were irradiated with neutrons after protons and vice versa with a total fluence of 6e14$\,$n$_{\text{eq}}$/cm$^2$. The depletion voltage is monitored with CV characteristics after the...
The study focuses on evaluating the characteristics of n+-p-p+ silicon detectors with Al2O3 isolation films processed by Atomic Layer Deposition (ALD) method with a goal of determining the value of the charge density in the alumina layer providing detector stable operation at high voltage. For this, distribution of potentials over the multiple n+ rings implemented in the detector as Voltage...
Microscopic studies using the Thermally Stimulated Current (TSC) method have been performed on nitrogen enriched and standard n-type FZ samples. The devices were irradiated with 23 GeV protons at the CERN PS and with reactor neutrons at Ljubljana. For the trap filling during the TSC measurement cycles either a forward current of 1 mA was applied or light of 520 nm wave length was injected into...
In the study impact of 40Ar ion irradiation was compared with proton irradiation for scaling the silicon detectors degradation characteristics and evaluating the influence of the vacancy generation rate on the degradation. The 40Ar ions with the total energy of 1.62 GeV were chosen since they provide uniform defect generation like 23 GeV protons. The values of the current...
The scheduled upgrade of the LHC to the HL-LHC presents new challenges in radiation damage studies. Around the world, campaigns to measure radiation hardness of detector sensors and components are being undertaken. Upon analysis of the I–V and C–V characteristics of BPW34F photodiodes, the hardness factors for proton beams at three different facilities have been measured. By computing the...
