Speaker
Reem Hani M Taibah
(Centre National de la Recherche Scientifique (FR))
Description
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with
pixel sensors, since it is radiation hard and cost effective.
The paper reports on the performance of thin n-on-p planar pixel sensors produced by FBK-CMM; the sensors were bum-bonded to the new
RD53A prototype chip.
After discussing the sensor technology an overview of 2018 testbeam results of the produced
devices will be given, before and after irradiation, including cluster
properties, hit and charge collection efficiency and space resolution.
Authors
Marco Bomben
(Centre National de la Recherche Scientifique (FR))
Reem Hani M Taibah
(Centre National de la Recherche Scientifique (FR))
Giovanni Calderini
(Centre National de la Recherche Scientifique (FR))
Giovanni Marchiori
(LPNHE Paris)
Francesco Crescioli
(Centre National de la Recherche Scientifique (FR))
Louis D'Eramo
(Centre National de la Recherche Scientifique (FR))
Maurizio Boscardin
(Universita degli Studi di Trento è INFN (IT))
Luciano Bosisio
(Universita e INFN (IT))
Nanni Darbo
(Universita e INFN Genova (IT))
Gian Franco Dalla Betta
(Universita degli Studi di Trento è INFN (IT))
Gabriele Giacomini
(Brookhaven National Laboratory)
Marco Meschini
(Universita e INFN, Firenze (IT))
Alberto Messineo
(Universita di Pisa & INFN (IT))
Dr
Sabina Ronchin
(FBK)
Nicola Zorzi
(Fondazione Bruno Kessler - FBK)
Dmytro Hohov
(Universite de Paris-Sud 11 (FR))
Anastasia Kotsokechagia
(LAL)
