Speakers
Angelo Rivetti
(INFN - National Institute for Nuclear Physics)
Angelo Rivetti
(Universita e INFN Torino (IT))
Description
Fully depleted monolithic CMOS sensors allow the prompt collection by
drift of large signals. They therefore can offer better signal-to-noise ratio, time resolution and radiation tolerance with respect to
conventional solutions. In this presentation, a technology that, thanks to
a patterned back-side, allows a full depletion of the substrate in the 100
um - 400 um range is presented. The technology is fully compatible with a
standard CMOS process. The results obtained on first prototypes fabricated
in a 110 nm PDK are presented and near term plans to consolidate the
technology platform will be discussed.
Author
Angelo Rivetti
(INFN - National Institute for Nuclear Physics)
