Speaker
Description
The low-energy electronic structure and topological nature of ZrTe$_5$ has recently been under debate with several contradictory results published. It consists of nearly linearly dispersing bands at the Gamma point with potentially a small band gap, making ZrTe$_5$ very sensitive to structural defects. However, only minor attention has been given to the influence of the sample growth method on the crystal quality and its physical properties.
Here we present angle-resolved photoemission spectroscopy and scanning tunneling microscopy measurements performed on samples grown by the two different methods used for ZrTe$_5$ growth. We will focus on the presence of defects and discuss their influence on the low-energy electronic structure of ZrTe$_5$.
