Speaker
Hermann Detz
(Brno University of Technology)
Description
Boron-containing III-V alloys have net yet been thoroughly characterized. Yet, the small lattice-constant of BAs enables applications in strain-engineering of nanowires. We report on the incorporation of B into self-catalyzed nanowires, grown by molecular beam epitaxy. Energy-dispersive X-ray spectroscopy scans in a scanning transmission electron microscope revealed a segregation of B atoms to the nanowire sidewalls, causing inverse pyramidal voids. Electrical measurements on harvested nanowires revealed a p-type conductivity due to anti-site incorporation of B. A rate equation-based model allowed to extract a reduced surface diffusion length at the order of 1000 nm for Ga-adatoms on B:GaAs nanowire sidewalls.
Authors
Suzanne Lancaster
(Institute of Solid-State Electronics, TU Wien)
Dr
Heiko Groiss
(Johannes Kepler University)
Josef Zeininger
(Institute of Solid-State Electronics, TU Wien)
Aaron Maxwell Andrews
(Institute of Solid State Electronics, TU Wien, Vienna, Austria)
Werner Schrenk
(Center for Micro- and Nanostructures, TU Wien)
Gottfried Strasser
(Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Vienna, Austria)
Hermann Detz
(Brno University of Technology)
