Speaker
Mr
David Stark
(ETH Zürich)
Description
Exploiting intersubband transitions in Ge/SiGe quantum cascade devices provides a way to integrate terahertz light emitters into silicon-based technology. To date all electroluminescence demonstrations of Si-based heterostructures have been p-type using hole-hole transitions. In the pathway of realizing an n-type Ge/SiGe terahertz quantum cascade laser, we present electroluminescence measurements of quantum cascade structures with top diffraction gratings. The devices for surface emission have been fabricated out of a 4-well quantum cascade laser design with 30 periods. An optical signal was observed with a maximum between 8-9 meV and full width at half maximum of roughly 4 meV.
Authors
Mr
David Stark
(ETH Zürich)
Dr
Luca Persichetti
(Università di Roma Tre)
Mr
Michele Montanari
(Università di Roma Tre)
Mr
Chiara Ciano
(Università di Roma Tre)
Dr
Luciana Di Gaspare
(Università di Roma Tre)
Prof.
Monica De Seta
(Università di Roma Tre)
Dr
Marvin Zöllner
(IHP-Leibniz-Institut für innovative Mikroelektronik)
Dr
Oliver Skibitzki
(IHP-Leibniz-Institut für innovative Mikroelektronik)
Dr
Michele Ortolani
(Università di Roma “La Sapienza”)
Dr
Leonetta Baldassarre
(Università di Roma “La Sapienza”)
Dr
Michele Virgilio
(Università di Pisa)
Dr
Thomas Grange
(nextnano GmbH)
Dr
Stefan Birner
(nextnano GmbH)
Dr
Kirsty Rew
(University of Glasgow)
Prof.
Douglas Paul
(University of Glasgow)
Prof.
Jerome Faist
(ETH Zürich)
Dr
Giacomo Scalari
(ETH Zürich)
