Speaker
Description
Graphene is a promising candidate for nano-electronic devices, due to the expected long spin lifetimes and high carrier mobilities. Improvements in fabrication for graphene nanostructures have leveraged their quality to such an extent, that quantum dots in bilayer graphene are comparable to the best devices in gallium arsenide [1].
We use finite bias spectroscopy to identify the single-particle and many-body ground- and excited states of electrostatically-defined quantum dots in bilayer. The results of our experiments allow us to propose a clear level scheme for two-particle spectra, in which the spin- and valley-entanglement and the exchange interactions play a crucial role [2].
[1] M. Eich, et al., Phys. Rev. X 8, 031023 (2018).
[4] A. Kurzmann, et al., arXiv:1904.07185 [cond-mat.mes-hall] (2019).
