Speaker
Dr
Suzanne Lancaster
(TU Wien)
Description
We have previously demonstrated a novel approach for the growth of III-V nanowires on Si, using focused ion beam (FIB) -implanted Ga as nucleation points for self-catalysed GaAs nanowire growth. In this work, we have further investigated the possibility of growing optically active nanowires using this technique, via the growth of GaAs nanowires containing single InGaAs quantum wells in the shell. The nanowires show good emission, proving the high material quality of NWs grown via FIB-implantation. By comparison with randomly nucleated NWs, we find some C-doping of the NW core, attributed to the implantation process.
Authors
Dr
Suzanne Lancaster
(TU Wien)
Mr
Markus Schinnerl
(TU Wien)
Aaron Maxwell Andrews
(Institute of Solid State Electronics, TU Wien, Vienna, Austria)
Masiar Sistani
(TU Vienna)
Alois Lugstein
(TU Vienna)
Werner Schrenk
(Center for Micro- and Nanostructures, TU Wien)
Gottfried Strasser
(Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Vienna, Austria)
Hermann Detz
(Brno University of Technology)
