Speaker
Nadine Gächter
(IBM/EPFL)
Description
Semiconductor-Metal heterostructures act as energy filters for charge transport with promising applications in thermoelectric energy conversion. Using a scanning thermal microscope technique we measure the temperature distribution of operando Al-Ge-Al nanowire devices integrated in a back-gated field effect transistor. The Ge segments are contacted with self-aligned quasi one-dimensional crystalline Al leads of 20 nm diameter. The high spatial resolution of our temperature map allows for the extraction of parameters governing the thermoelectric processes at the energy barrier, which are hardly extractable using other techniques. We extract Peltier coefficient, thermal conductivity and interface resistance to the substrate.
Authors
Nadine Gächter
(IBM/EPFL)
Fabian Könemann
(IBM)
Masiar Sistani
(TU Vienna)
Maximilian Georg Bartmann
(TU Vienna)
Philipp Staudinger
(IBM)
Alois Lugstein
(TU Vienna)
Bernd Gotsmann
(IBM)
