Speaker
Margherita Matzer
(Johannes Kepler University)
Description
Spin pumping is an efficient mechanism for the inception of spin current and for its conversion into charge current in non-magnetic metals or semiconductors via spin Hall effects. The generation of spin current in bilayers Py/n-GaN:Si is here reported. In n-GaN:Si and for a layer thickness greater than the spin diffusion length - a condition not met in previous studies on e.g. n-ZnO - a spin Hall angle θSH = 3.03 × 10−3 is found, exceeding by one order of magnitude those of other relevant semiconductors, and pointing at wurtzite nitride compounds as efficient spin current generators.
Authors
Margherita Matzer
(Johannes Kepler University)
Rajdeep Ahikari
(Johannes Kepler University)
Prof.
Alberta Bonanni
(Johannes Kepler University)
