Speaker
Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
Description
We will present latest results of dark current (I-V) and charge collection efficiency (CCE, obtained using a calibrated laser source) of OVERMOS, a high resistivity TJ 180nm CMOS MAPS, irradiated with neutrons up to 1e15 cm-2 fluence. Results of charge collection within the 40 x 40 um2 pixel region,with 5um resolution, and charge collection time will be shown.
Test results are compared with 3D TCAD results using a device structure obtained through process simulator SPROCESS and using SDEVICE for electro/optical simulations.Implemented models in TCAD include SiO2 and CoSi2 optical attenuation, Si/SiO2 surface traps model and HPTM (Hamburg Penta Traps Model) for bulk radiation damage.
Authors
Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
Jens Dopke
(Science and Technology Facilities Council STFC (GB))
Marcus Julian French
(Science and Technology Facilities Council STFC (GB))
Dr
Stephen Mcmahon
(Science and Technology Facilities Council STFC (GB))
Iain Sedgwick
(STFC)
Paul Seller
(RAL)
Fergus Wilson
(Science and Technology Facilities Council STFC (GB))
Zhige Zhang
(Science and Technology Facilities Council STFC (GB))
Steven Worm
(University of Birmingham)
Zhijun Liang
(Chinese Academy of Sciences (CN))
Hongbo Zhu
(Chinese Academy of Sciences (CN))
Qinglei Xiu
(Chinese Academy of Sciences (CN))
