Speaker
Yana Gurimskaya
(CERN)
Description
P-type silicon pad diodes with variation of material type - EPI, FZ and CZ - and resistivity (boron concentration) have been irradiated with reactor neutrons with different fluences in JSI, Ljubljana, Slovenia and with gamma rays (Co-60) in BGS, Wiehl, Germany. Comparative investigation of the radiation induced defects by Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques have been performed. The obtained results will be presented and discussed.
Authors
Yana Gurimskaya
(CERN)
Isidre Mateu
(CERN)
Soren Udesen
(Aarhus University (DK))
Pedro Dias De Almeida
(Universidad de Cantabria and CSIC (ES))
Marcos Fernandez Garcia
(Universidad de Cantabria and CSIC (ES))
Michael Moll
(CERN)
