Conveners
Defects and Material Characterization
- Michael Moll (CERN)
- Gianluigi Casse (University of Liverpool (GB))
At the end of LHC Run II fluence in silicon trackers reached the level 10e15 1MeV neq/cm2. Comparison of prediction with measurements showed some discrepancies between experiments which may be driven by differences in tools used for the simulation. In this study, we compared two physics models: Pythia 8.2 and DPMJET3 used for the fluence simulation in Fluka package for geometry of the typical...
Silicon detectors were irradiated with with reactor neutrons up to very high fluences of 3e17 n/cm2. First results of measurements at these fluences were shown at the 32nd RD50 workshop. New charge collection measurements with Sr-90 source and new E-TCT measurements will be presented in this contribution.
Pixel detectors, made of Si and CdTe, were characterized by raster scanning the detector surfaces with laser-TCT setup. The detectors were manufactured using aluminum oxide (Al$_2$O$_3$) thin films grown by atomic layer deposition (ALD) as dielectric and field insulator. From the TCT-maps we measure signal shaping within the bulk, locate defects, and evaluate their impact to the charge...
We present preliminary results of the TID bulk damage study in gamma-irradiated n-in-p silicon strip sensors.
The sensors were irradiated by a high-flux 60Co gamma rays up to a total dose of 300 Mrad in approximate charged particle equilibrium.
The study was performed on high-rho silicon sensors with initial resistivities of 4 and 17 kOhmcm.
The properties of sensors were characterized...
A new proton irradiation site for NIEL damage studies is currently being developed at the Bonn isochronous cyclotron of the HISKP. Irradiations with a proton energy of 12.7 MeV at device location and currents up to 1 uA are possible. A unique feature of the site is the newly installed beam-diagnostics system. It allows the determination of the proton fluence at percent level and can be used as...
CiS has started various projects to develop detectors for the detection of UV / DUV, X-ray, neutrons, low energy electrons, alpha and beta particles, prompt-gamma detection and Delta-E detectors.
This requires amongst others extremely flat pn junctions with sufficient sheet resistance even for larger areas and thinnest dead layers.
Technological methods, such as Plasma Immersion Ion...