Conveners
Defects and Material Characterization
- Michael Moll (CERN)
- Gianluigi Casse (University of Liverpool (GB))
-
Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))13/06/2019, 09:00
At the end of LHC Run II fluence in silicon trackers reached the level 10e15 1MeV neq/cm2. Comparison of prediction with measurements showed some discrepancies between experiments which may be driven by differences in tools used for the simulation. In this study, we compared two physics models: Pythia 8.2 and DPMJET3 used for the fluence simulation in Fluka package for geometry of the typical...
Go to contribution page -
Igor Mandic (Jozef Stefan Institute (SI))13/06/2019, 09:20
Silicon detectors were irradiated with with reactor neutrons up to very high fluences of 3e17 n/cm2. First results of measurements at these fluences were shown at the 32nd RD50 workshop. New charge collection measurements with Sr-90 source and new E-TCT measurements will be presented in this contribution.
Go to contribution page -
Dr Matti Kalliokoski (Ruđer Bošković Institute (HR))13/06/2019, 09:40
Pixel detectors, made of Si and CdTe, were characterized by raster scanning the detector surfaces with laser-TCT setup. The detectors were manufactured using aluminum oxide (Al$_2$O$_3$) thin films grown by atomic layer deposition (ALD) as dielectric and field insulator. From the TCT-maps we measure signal shaping within the bulk, locate defects, and evaluate their impact to the charge...
Go to contribution page -
Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))13/06/2019, 10:00
We present preliminary results of the TID bulk damage study in gamma-irradiated n-in-p silicon strip sensors.
Go to contribution page
The sensors were irradiated by a high-flux 60Co gamma rays up to a total dose of 300 Mrad in approximate charged particle equilibrium.
The study was performed on high-rho silicon sensors with initial resistivities of 4 and 17 kOhmcm.
The properties of sensors were characterized... -
Yana Gurimskaya (CERN)13/06/2019, 10:20
P-type silicon pad diodes with variation of material type - EPI, FZ and CZ - and resistivity (boron concentration) have been irradiated with reactor neutrons with different fluences in JSI, Ljubljana, Slovenia and with gamma rays (Co-60) in BGS, Wiehl, Germany. Comparative investigation of the radiation induced defects by Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy...
Go to contribution page -
David-Leon Pohl, David-Leon Pohl (University of Bonn (DE))13/06/2019, 11:20
A new proton irradiation site for NIEL damage studies is currently being developed at the Bonn isochronous cyclotron of the HISKP. Irradiations with a proton energy of 12.7 MeV at device location and currents up to 1 uA are possible. A unique feature of the site is the newly installed beam-diagnostics system. It allows the determination of the proton fluence at percent level and can be used as...
Go to contribution page -
Mr Ralf Röder (CiS Erfurt)13/06/2019, 11:40
CiS has started various projects to develop detectors for the detection of UV / DUV, X-ray, neutrons, low energy electrons, alpha and beta particles, prompt-gamma detection and Delta-E detectors.
Go to contribution page
This requires amongst others extremely flat pn junctions with sufficient sheet resistance even for larger areas and thinnest dead layers.
Technological methods, such as Plasma Immersion Ion... -
Juozas Vaitkus (Vilnius University )13/06/2019, 12:00
-
Gianluigi Casse (University of Liverpool (GB))13/06/2019, 12:10