Jun 12 – 14, 2019
Lancaster University
Europe/London timezone

DLTS studies of point and cluster defects in 𝞬- and neutron-irradiated p-type Si pad diodes

Jun 13, 2019, 10:20 AM
Cavendish Lecture Theatre, Faraday Building (Lancaster University)

Cavendish Lecture Theatre, Faraday Building

Lancaster University

Coffee and lunch breaks in the Foyer of the Physics building.


Yana Gurimskaya (CERN)


P-type silicon pad diodes with variation of material type - EPI, FZ and CZ - and resistivity (boron concentration) have been irradiated with reactor neutrons with different fluences in JSI, Ljubljana, Slovenia and with gamma rays (Co-60) in BGS, Wiehl, Germany. Comparative investigation of the radiation induced defects by Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques have been performed. The obtained results will be presented and discussed.

Primary authors

Yana Gurimskaya (CERN) Isidre Mateu (CERN) Soren Udesen (Aarhus University (DK)) Pedro Dias De Almeida (Universidad de Cantabria and CSIC (ES)) Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES)) Michael Moll (CERN)

Presentation materials