Speaker
Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
Description
We present preliminary results of the TID bulk damage study in gamma-irradiated n-in-p silicon strip sensors.
The sensors were irradiated by a high-flux 60Co gamma rays up to a total dose of 300 Mrad in approximate charged particle equilibrium.
The study was performed on high-rho silicon sensors with initial resistivities of 4 and 17 kOhmcm.
The properties of sensors were characterized before and after irradiation using I-V and C-V measurements and the effective dopant concentration was extracted from these measurements. It was observed that the full depletion voltage and effective doping concentration decreases with increasing TID.
Authors
Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
Michal Marcisovsky
(Acad. of Sciences of the Czech Rep. (CZ))
Vera Latonova
(Acad. of Sciences of the Czech Rep. (CZ))
Denis Dudas
(UJP, Praha a.s.)
Jiri Kroll
(Acad. of Sciences of the Czech Rep. (CZ))
Iveta Zatocilova
(Charles University (CZ))
Vaclav Vrba
(Czech Technical University (CZ))
Maria Marcisovska
(Acad. of Sciences of the Czech Rep. (CZ))
Vladimir Kafka
(Czech Technical University, Prague)
