12–14 Jun 2019
Lancaster University
Europe/London timezone

Session

Device Simulation

13 Jun 2019, 13:30
Cavendish Lecture Theatre, Faraday Building (Lancaster University)

Cavendish Lecture Theatre, Faraday Building

Lancaster University

Coffee and lunch breaks in the Foyer of the Physics building.

Conveners

Device Simulation

  • Joern Schwandt (Hamburg University (DE))

Presentation materials

There are no materials yet.

  1. Neil Moffat (University of Glasgow (GB))
    13/06/2019, 13:30

    Low Gain Avalanche Detectors (LGAD) are part of family of Avalanche Photodiodes but have only small gain of an order of magnitude. LGAD’s have been shown to have a very fast response time, order of picoseconds, which can make them useful in many applications, including concurrent excellent time and position resolution tracking for particle physics and synchrotron applications.
    In this work we...

    Go to contribution page
  2. Dimitrios Loukas (Nat. Cent. for Sci. Res. Demokritos (GR))
    13/06/2019, 13:50

    We present a program for fast calculation of capacitances in planar silicon pixel (strip) sensors, based on a 3D (2D) numerical solution of the Laplace equation. A comparison between calculated capacitances and measurements on silicon strip sensors, along with simulation results obtained with the TCAD Sentaurus suite are presented. The validity of 2D calculations is checked with measurements...

    Go to contribution page
  3. Werner Riegler (CERN)
    13/06/2019, 14:10

    The classic Ramo-Shockley theorem applies to detectors with perfectly conducting electrodes and perfectly insulating materials surrounding these electrodes.
    In silicon sensors this condition is not necessarily fulfilled. Junctions between different doping layers result in regions of finite conductivity. Radiation damage can lead to large regions of finite conductivity in a sensor that have an...

    Go to contribution page
  4. Joern Schwandt (Hamburg University (DE))
    13/06/2019, 14:30

    The understanding of the weighting field of irradiated silicon sensors is essential for calculating the response of silicon detectors in the radiation environment at accelerators like at the CERN LHC. Using 1-D calculations of non-irradiated pad sensors and 1-D TCAD simulations of pad sensors before and after irradiation, it is shown that the time-dependence of the weighting field is related...

    Go to contribution page
  5. Heinrich Schindler (CERN)
    13/06/2019, 14:50

    Garfield++ is a toolkit for the detailed simulation of particle detectors based on ionization measurement in gases or semiconductors. After a brief introduction to the program, ongoing work on the implementation of the simulation of induced currents using time-dependent weighting fields is presented.

    Go to contribution page
  6. Joern Schwandt (Hamburg University (DE))
    13/06/2019, 15:10
Building timetable...