Conveners
Precision Timing Detectors
- Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
- Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
- Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))
The MIP Timing Detector (MTD) of the Compact Muon Solenoid (CMS) is designed to provide precision timing information (with resolution of ~40 ps) for charged particles as part of the Phase II upgrade program to prepare for the HL-LHC. The endcap region of MTD, called the Endcap Timing Layer (ETL), will cover the high radiation pseudo-rapidity region between |η|=1.6 and 3.0. The ETL will be...
A High Granularity Timing Detector (HGTD) is proposed for the ATLAS detector upgrade for the high luminosity LHC phase where the pile-up is expected to increase on average to 200 interactions per bunch crossing. The detector will be in front of the liquid Argon end-cap calorimeters for pile-up mitigation and for bunch per bunch luminosity measurements. Two Silicon sensors double sided layers...
In this contribution, I will present the data currently available on the effects of temperature and irradiation on the gain mechanisms of LGAD. The data currently available regard both the multiplication mechanism in the bulk and in the gain layer. From these measurements, a model of the behavior of future LGAD productions vs temperature and fluence can be established.
For the high luminosity LHC or Phase-II operation, the ATLAS and CMS experiments are planning to include especial detector in order to perform timing measurements of minimum ionizing particles (MIPs). Both detector will be exposed to a radiation levels up to 3E15 neq/cm2 and will required a timing performance of about 30 ps. Under these circumstances, Low Gain Avalanche Detectors (LGADs) are...
This contribution is focusing on two main topics in UFSD characterization: uniformity of gain in a UFSD productions and effect of the irradiation on these sensors.
In the first part of this contribution I will report on the measurements of the gain layer uniformity performed on UFSD sensors manufactured by Hamamatsu Photonics (HPK) and by Fondazione Bruno Kessler (FBK).
The second part of...
Profiting from our internal silicon-dedicated clean-room facility, we developed an LGAD technology in-house. We fabricated single pads and arrays of pads on several 50-um thick p-type epitaxial wafers. The wafers differ for the implantation parameters (i.e., energy and dose) of the gain-layer, resulting in the achievement of gains in a wide range. We attain maximum gains in the order of 25,...
The first LGAD sensors designed and fabricated in China have been evaluated including the basic electrical properties as well as timing properties. The status of the planned proton irradiation in China will also be presented. In addition, the joint project to produce Schottky diodes on epitaxial silicon for radiation damage study will be introduced.
In this contribution we will show the latest results from laboratory measurements of Low-Gain Avalanche Diodes (LGADs) from a common AIDA-2020 run fabricated by CNM. These sensors come in two different thickness ( 50 and 35 µm) and different gain layer doping concentrations. The test setup used for this studies consist of a Sr-90 source and couples of identical sensors aligned to form a...
The third production of Ultra Fast Silicon Detectors (UFSD3) from Fondazione Bruno Kessler (FBK) and Low Gain Avalanche Detectors (LGADs) from Hamamatsu Photonics K.K. (HPK), produced for CMS, include 2x2 sensors with different structural strategies, specifically with different values of narrower inactive region widths between the pads. These sensors have been designed to study specific...
Low gain avalanche detectors (LGADs) are currently the state-of-the-art silicon detectors for timing application in HEP experiments. One limitation of the current technology is the relatively wide dead region present between pixels (40-60 µm), which reduces the effective fill-factor and the efficiency of the sensors and might limit some applications in which finely segmented detectors are...
Low Gain Avalanche Diodes provide excellent timing capabilities with moderate radiation resistance for HL-LHC applications. Segmented LGADs (microstrips or pixels) implement the amplification layer below the electrodes, leading to non-uniform gain across the surface of the detector. This is the so-called "filling factor" problem. A possible way to achieve uniform amplification is by moving the...
In this contribution we explore the recent results coming from the first RSD (Resistive AC-Coupled Silicon Detectors) production run at Fondazione Bruno Kessler. After reviewing the design, layout and technology related to the resistive AC-coupled readout paradigm, we present some static and dynamic characterizations of our detectors before irradiation, along with extensive comparisons between...
