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Silicon Sensors for Extreme Fluences

18 Feb 2020, 18:00
20m
TU the Sky (TU Wien)

TU the Sky

TU Wien

Getreidemarkt 9, 1060 Wien (11th floor, BA building)
contributed talk hybrid sensors (3D, LGAD) Radiation and High Fluence

Speaker

Valentina Sola (Universita e INFN Torino (IT))

Description

Present silicon sensor technology allows to efficiently operate sensors up to 10$^{16}$ n$_{eq}$/cm$^2$. However, several future applications, such as tracking detectors in high-luminosity and high-energy particle physics experiments, monitors for particle therapy and nuclear fusion reactors, envisage the use of silicon sensors in environments with fluences exceeding 10$^{17}$ n$_{eq}$/cm$^2$.

To overcome the present limit, we propose a design of silicon sensors which extends the range of operation by more than one order of magnitude, up to fluences of 5$\cdot$10$^{17}$ n$_{eq}$/cm$^2$. The idea behind this radiation tolerance exploits the saturation of radiation damage effects, observed above 5$\cdot$10$^{15}$ n$_{eq}$/cm$^2$, in combination with two developments in sensor technology: (i) the use of thin sensors (20-30 $\mu$m), intrinsically less affected by radiation than thicker sensors, and (ii) the presence of internal signal multiplication (gain of 5-10), to compensate for the low signals generated in thin active volumes.

Primary authors

Valentina Sola (Universita e INFN Torino (IT)) Roberta Arcidiacono (Universita e INFN Torino (IT)) Giacomo Borghi (Fondazione Bruno Kessler) Maurizio Boscardin (FBK Trento) Nicolo Cartiglia (INFN Torino (IT)) Marco Ferrero (Universita e INFN Torino (IT)) Simona Giordanengo (Istituto Nazionale di Fisica Nucleare) Marco Mandurrino (INFN) Ennio Monteil (Universita e INFN Torino (IT)) Giovanni Paternoster (Fondazione Bruno KEssler) Federico Siviero (INFN - National Institute for Nuclear Physics) Marta Tornago (Universita e INFN Torino (IT))

Presentation materials