Conveners
Materials, Characterisation, Electronics
- Marco Meschini (Universita e INFN, Firenze (IT))
In previous work, we have reported on the fabrication of pixel detectors on p-type magnetic Czochralski silicon substrates, employing a layer of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator. The high dielectric constant of Al2O3 facilitates implementation of capacitive coupling, which separates the signal from the significantly increased...
In silicon detectors, a fraction of the highly-doped region represents a dead layer, where the generated charge carriers are lost. By minimising the dead layer, this charge loss is minimised as well. This is important when the determination of the exact generated charge is crucial: e. g. in case of isotope identification with the $\Delta$E-E method or energy resolution measurements of...
IV and CV curves of are crucial measurements required to characterise silicon sensors. They have to be performed at reception and at several steps of particle detector modules assembly procedure to spot potential damages, at least in the prototyping phase.
High voltage (1kV) biasing of those sensors and accurate, low current measurements (50µA max) are mandatory for this. Typical instruments...
The LHC machine will be upgraded targeting a peak luminosity of $5-7.5\times10^{34}$cm$^{-2}$s$^{-1}$ and aiming to collect an integrated luminosity of $3000-4500\;$fb$^{-1}$ in 10 years. The Compact Muon Solenoid (CMS) silicon tracker (Inner Tracker, IT) will be replaced at the High Luminosity Large Hadron Collider (HL-LHC) upgrade by a new radiation-hard detector capable of handling higher...
P-type silicon strip sensors will be used as particle detectors in harsh radiation environment, as in the High Luminosity Large Hadron Collider with fluences up to $1\cdot10^{16}~n_{\mathrm{eq}}/\mathrm{cm}^2$. They have been irradiated and annealed to predict their long term performance. Charge multiplication, which appears at high voltages after long annealing times, increases the n charge...
Previously, fabrication of n+-in-p AC-coupled pixel detectors on p-type magnetic Czochralski silicon substrates at Micronova Nanofab facilities in Espoo, Finland has been reported. In our pixel detectors, we employ a layer of aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used SiO2. The high dielectric constant and...
