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ISOLDE Workshop and Users meeting 2006/2007

12–14 Feb 2007
CERN
Europe/Zurich timezone

Session

Physics 2

13 Feb 2007, 11:00
Council Chamber, 503/1-001 (CERN)

Council Chamber, 503/1-001

CERN

Conveners

Physics 2

  • Peter Butler (Liverpool)

Presentation materials

There are no materials yet.

  1. 40. Evolution of nuclear shell structure with neutron excess in the fp-shell
    Prof. Bogdan Fornal
    13/02/2007, 11:00
    The evolution of properties of atomic nuclei with respect to increase in neutron richness is one of the crucial issues in the modern nuclear structure studies. In particular, neutron-rich nuclei above the doubly magic 48Ca have recently attracted a lot of interest due to an N=32 subshell closure that was evidenced in 52Ca, 54Ti and 56Cr. This phenomenon was attributed to the strong...
  2. 30. Coulomb excitation of neutron-rich 44Ar at SPIRAL
    Magda Zielinska (CEA Saclay)
    13/02/2007, 11:30
    A low-energy Coulomb excitation experiment on neutron-rich 44Ar has been performed at the SPIRAL facility of GANIL. The primary question addressed by the experiment was the possible weakening of the N=28 shell closure in neutron-rich nuclei and, closely connected to that, the development of deformation and shape coexistence in this region of the nuclear chart. A beam of 44Ar was produced...
  3. 34. Level densities and gamma strength functions
    Dr Sunniva Siem (University of Oslo)
    13/02/2007, 11:50
    The Oslo group has developed a technique to measure with high precission the level density from the ground state up to the neutron binding energy. The method provides simultaneously the level density and gamma-ray strength function in one and the same experiment. After establishing the level density as a function of excitation energy, the entropy is known and we can explore various...
  4. 24. Lattice location studies of the "anti-site" impurities As and Sb in ZnO and GaN
    Dr Ulrich Wahl (Instituto Tecnológico e Nuclear ITN)
    13/02/2007, 12:10
    The group V impurities As and Sb are of interest as possible acceptor dopants in the II-VI semiconductor ZnO and as isoelectronic impurities in the III-V semiconductor GaN. Since the chemical valence of As and Sb is closer to O or N than to Zn or Ga, it is in in both cases often assumed that As and Sb substitute for the anions of the compound semiconductor, i.e. for O in ZnO and for N in...
  5. 21. Lattice site location of implanted Fe in SrTiO3 and lattice damage recovery studies
    Ana Claudia Lourenco Santana Marques (Centro de Física Nuclear da Universidade de Lisboa CFNUL)
    13/02/2007, 12:30
    We report on the lattice site location of Fe in SrTiO3 single crystals using the emission channeling technique. Following the room temperature 60 keV implantation of the precursor isotope 59Mn(t1/2=0.71s) to a dose of 2E13 at./cm2, the angular distribution of β- particles emitted from 59Fe(t1/2=44.6d) was recorded around the <100>, <111>, <211> and <110> axis in the as- implanted...
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