Speaker
Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
Description
First batch of LGAD devices, developed by RAL, University of Oxford, University of Birmingham and Open University in collaboration with T2ev semiconductor foundry, have been designed and fabricated for fast timing applications and potential use in HGTD for ATLAS.
Up to eight different LGAD device flavours, differing in energy and dose of the implanted gain layer, have been fabricated on 6’’ wafers.
On each wafer, both LGAD and PiN diodes of same layout are available for comparison of performances.
Preliminary test results on the first batch of LGAD structures, including description and details of simulations of the devices , will be presented.
Description of coming tests and plans for next fabrication iteration will also be given.
Authors
Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
Dr
Stephen Mcmahon
(Science and Technology Facilities Council STFC (GB))
Philip Patrick Allport
(University of Birmingham (UK))
Prof.
Daniela Bortoletto
(University of Oxford (GB))
Richard Plackett
(University of Oxford (GB))
Dr
Konstantin Stefanov
(University of Oxford (GB))
Laura Gonella
(University of Birmingham (UK))
Martin Gazi
(University of Oxford (GB))
Jonathan Mulvey
(University of Birmingham)
Dr
Douglas Jordan
(Teledyne)
