Speaker
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
Description
HRTEM, LA-ICP-MS and DLTS techniques were employed to characterize several types of B-doped silicon diodes after irradiation with hadrons. The HRTEM results on LGAD samples irradiated with 1019cm-2 show that there is a preferential grouping of defects along tracks normal to the film surface. We will present the LA-ICP-MS technique, recently installed in NIMP, with which we could estimate the Boron concentration not only in the moderate doped LGADs gain layer but also in high resistivity EPI and FZ silicon. The DLTS results on samples of different resistivity and impurity content are presented and discussed in relation with the acceptor removal process.
Authors
Dr
Cristina Besleaga Stan
(National Institute of Materials Physics)
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
Andrei Nitescu
(National Institute of Materials Physics)
Dr
Andrei Kuncser
(National Institute of Materials Physics)
Dr
Stefan Neatu
(National Institute of Materials Physics)
Dan Simion
(National Institute of Materials Physics)
Dr
Lucian Filip
(National Institute of Materials Physics)
Co-authors
Dr
Eckhart Fretwurst
(Hamburg University)
Dr
Joern Schwandt
(Hamburg University)
Dr
Gregor Kramberger
(Jozef Stefan Institute)
Dr
Michael Moll
(CERN)
