Speaker
Description
In this contribution, I will present the characterization of the latest LGAD productions manufactured at FBK (UFSD3.2) and HPK (HPK2), performed with the β-source (Sr90) setup of the Torino Silicon Lab (INFN – University of Torino). In particular, I will focus on temporal resolution and gain measurements of either irradiated (up to a fluence of 2.5E15 neq/cm2 ) and non-irradiated devices. Results on sensors with different gain layer depths and carbon implantation doses will be shown.
In addition, I will compare the performances of FBK UFSD3.2 sensors with four different active thicknesses (25, 35, 45, 55 μm).
I will also discuss the issues faced during the development of a dry and cold (-30°C) setup and provide some informations on the Torino β-setup, both on the hardware and software side.
