Speaker
Danyyl Brzhechko
(Universitaet Zuerich (CH))
Description
Radiation defects induced by the harsh radiation environment in the CMS experiment heavily impact the operation of the upgraded silicon pixel detector, that has been installed in the beginning of 2017. During the data taking period of 2017-2018, the phase 1 CMS pixel detector, composed of 4 barrel layers and 3 endcap disks, has experienced up to $1 \times 10^{15} n_{eq}/cm^{2}$. In this presentation we will discuss the evolution of the detector properties, such as leakage current and depletion voltage under irradiation. We present the simulation of evolution of these quantities in 2017-2018 for barrel and 2 endcap regions, and compare it with the data.