The 37th RD50 Workshop (Zagreb -- online Workshop)

Session

CMOS

20 Nov 2020, 13:00

Conveners

CMOS

• Eva Vilella Figueras (University of Liverpool (GB))

5. Irradiation study with passive CMOS pixel detector structures on RD50-MPW2 chips

Igor Mandic (Jozef Stefan Institute (SI))

20/11/2020, 13:00

RD50-MPW2 is pixel detector prototype fabricated in 150 nm High Voltage CMOS technology at LFoundry. It is a successor of RD50-MPW1 chip developed within RD50 collaboration to study this technology for future experiments. Chips were manufactured on p-type silicon with different initial resistivities and irradiated with neutrons in reactor in Ljubljana. E-TCT and I-V measurements were made...

8. Radiation tolerant small-pixel passive CMOS sensors with RD53A readout

Yannick Manuel Dieter (University of Bonn (DE))

20/11/2020, 13:20

With the HL-LHC upgrade of the ATLAS detector, the surface of the ATLAS pixel detector will increase from 2 m² to approximately 13 m² . Therefore, commercial CMOS processing lines offering high production throughput at comparatively low costs, represent an attractive option for such large-area detectors. Further benefits originate from multiple metal layers, metal–insulator–metal capacitors,...

14. Characterization of passive CMOS strip detectors

Jan Cedric Honig (Albert Ludwigs Universitaet Freiburg (DE))

20/11/2020, 13:40

An increasing trend towards full silicon trackers in future high energy physics experiments provokes the need to cover increasingly large areas with silicon detectors. As a consequence, detector designs that utilize cost-effective production processes are becoming more important. Employing CMOS production lines for sensors allows large and high-resistive wafers at low cost, making them a prime...

16. Active pixel matrix measurements of irradiated RD50 HV-CMOS prototypes

Patrick Sieberer (Austrian Academy of Sciences (AT))

20/11/2020, 14:00

The active matrix of the RD50 HV-CMOS MPW2 prototype consists of 8x8 pixels with analogue frontend only. While former measurements on irradiated sensors have been performed only at passive test-
structures, first results of the irradiated active matrix are discussed in this presentation. The test structures do have a similar layout than the active matrix, but only one pixel at a time can be...

37. Inter-pixel resistance measurements of irradiated pixel sensors with different isolation structures

Sinuo Zhang (University of Bonn (DE))

20/11/2020, 14:30

So-called "passive CMOS" pixel and stript sensors using commercial CMOS chip fabrication lines have become an interesting alternative to standard planer sensors. An important question is how the resistance between electrodes changes as a function of irradiation fluence for various implant geometry. We present preliminary results on the measurements of the inter-pixel resistance of passive CMOS...

53. Proposal: Passive CMOS submission for sensors and test structures

David-Leon Pohl, David-Leon Pohl (University of Bonn (DE)), David-Leon Pohl (University of Bonn)

20/11/2020, 14:50

48. Discussion: CMOS sensors

Eva Vilella Figueras (University of Liverpool (GB))

20/11/2020, 15:00