Conveners
Detector Characterization and Simulation
- Joern Schwandt (Hamburg University (DE))
- Gianluigi Casse (University of Liverpool (GB))
Generation of the current by radiation-induced defects in Si p-n junction detectors is one of the processes responsible for their radiation degradation. In the study, analysis of the I-V characteristics is performed for the profiling of radiation defects acting as current generation centers. The experimental results are obtained for the Si p+-n-n+ diodes with a nonuniform defect distribution...
Radiation defects induced by the harsh radiation environment in the CMS experiment heavily impact the operation of the upgraded silicon pixel detector, that has been installed in the beginning of 2017. During the data taking period of 2017-2018, the phase 1 CMS pixel detector, composed of 4 barrel layers and 3 endcap disks, has experienced up to $1 \times 10^{15} n_{eq}/cm^{2}$. In this...
Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors.This damage has important implications for data-taking operations, charged-particle track reconstruction,detector simulations, and physics analysis. This talk presents simulations and measurements of the leakage current for the ATLAS pixel detector as a function of location in the detector...
The radiation hardness of detectors is of paramount importance for the success of the scheduled High Luminosity upgrade of the CERN Large Hadron Collider. This has driven a global campaign for sensor characterisation and irradiation testing facility qualification. The effect of radiation damage from various particle species and energies are conventionally communicated in term of the equivalent...
We report on the study of response of the MOS capacitor with atomic layer deposited (ALD) Al2O3 layer on p-type silicon substrate to neutron, proton, and gamma irradiation. Alumina films are prominent for use as passivation layers in silicon radiation detectors instead of surface electron accumulation termination structures as alumina forms negative oxide charge on the silicon-oxide interface....
During the era of the High-Luminosity (HL) LHC the experimental devices will be subjected to enhanced radiation levels with fluxes of neutrons and charged hadrons in the inner detectors up to ~2.3x$10^{16}$ n$_{eq}$/cm$^{2}$ and total ionization doses up to ~1.2 Grad. A systematic program of irradiation tests with neutrons and charged hadrons is being run by LHC collaborations in view of the...
This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm$^{-3}$) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated...
