Name: 36th RD50 Workshop (CERN - - online Workshop)
Start: 2020-06-03T09:00:00+02:00
End: 2020-06-05T17:00:00+02:00
Location: No location set

36th RD50 Workshop (CERN - - online Workshop)

from Wednesday 3 June 2020 (09:00) to Friday 5 June 2020 (17:00)

Monday 1 June 2020
Tuesday 2 June 2020
Wednesday 3 June 2020
09:40 Welcome
Welcome
09:40 - 10:00
Contributions

09:40 Welcome - Michael Moll (CERN)
10:00 Defect and Material Characterization
Defect and Material Characterization
10:00 - 13:00
Contributions

10:00 Quantum characteristics of electron and hole quasiparticles in silicon defects - Darius Abramavicius (Institute of Chemical Physics, Vilnius University)

10:20 Electron mobility dependence on neutron and electron irradiation fluence in Si - Juozas Vaitkus (Vilnius University, Institute of Photonics and Nanotechnology)

10:40 Update on Radiation damage investigation of epitaxial P type Silicon using Schottky / pn junctions and LGAD - GaN activities at RAL - Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))

11:20 DLTS and TSC techniques: A brief introduction - Anja Himmerlich (CERN)

11:40 Defect characterization in boron doped silicon sensors after exposure to protons, neutrons and electrons - Yana Gurimskaya (CERN)

12:00 DLTS studies on as irradiated PiN diodes of different resistivity - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

12:20 Discussion Session: Defect Characterization & Acceptor Removal - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
14:00 Detector Characterization, NIEL and Irradiation Facilities
Detector Characterization, NIEL and Irradiation Facilities
14:00 - 17:00
Contributions

14:00 Determination of the proton related damage on commercial and high-ohmic silicon pad diodes - Konstantinos Nikolopoulos (University of Birmingham (GB))

14:20 Fluence profiling at JSI TRIGA reactor irradiation facility - Valentina Sola (Universita e INFN Torino (IT))

14:40 Measurement of the charge collection for the irradiated $\text{n}^{+}\text{p}\text{p}^+$ pad diode in the region of the $\text{n}^{+}\text{p}$ interface - Mohammadtaghi Hajheidari (Hamburg University (DE))

15:00 Timing resolution on a 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))

15:40 Investigation on the effects of trapped charge on the signal from subsequent laser pulses in irradiated p-type sensors - Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))

16:00 TPA-TCT -- Two Photon Absorption - Transient Current Technique - Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE))

16:20 1550 nm Femtosecond Fiber Laser System for the Two-Photon Excitation of Transient Currents in Semiconductor Detectors - P. Pérez-Millán (FYLA LASER SL)

16:40 [US] Measurement of the silicon effective band gap energy with the ATLAS pixel detector - Aidan Grummer (University of New Mexico (US))
17:30 Collaboration Board
Collaboration Board
17:30 - 20:30
Thursday 4 June 2020
10:00 Simulations
Simulations
10:00 - 11:30
Contributions

10:00 [AS] TCAD Simulation of Radiation Damage for LGAD Sensor - Tao Yang (Chinese Academy of Sciences (CN))

10:20 [AS] TRACS development for LGAD sensor - Suyu Xiao (Chinese Academy of Sciences (CN))

10:40 Simulation of thickness dependence of time resolution for simple planar devices. - Marius Mahlum Halvorsen (Norwegian University of Science and Technology (NTNU) (NO))

11:00 Discussion: Simulations - Joern Schwandt (Hamburg University (DE))
11:30 LGAD
LGAD
11:30 - 17:20
Contributions

11:30 [AS] Radiation performance of the Low Gain Avalanche Diodes developed by NDL and IHEP in China - Yunyun Fan (IHEP)

11:50 First LGAD timing/jitter measurement at ELI with fs-lasers of 800 nm and 1450 nm - Gordana Lastovicka-Medin (University of Montenegro)

13:20 Investigation of LGAD performance dependence on neutron flux - Gregor Kramberger (Jozef Stefan Institute (SI))

13:40 Annealing effects on operation of thin Low Gain Avalanche Detectors - Alissa Howard (Jozef Stefan Institute (JSI))

14:00 AC-LGAD strip sensor measurements with 120 GeV protons - Karri Folan Di Petrillo (Fermi National Accelerator Lab. (US))

14:40 Latest results on RSD spatial and timing resolution - Marta Tornago (Universita e INFN Torino (IT))

15:00 Position reconstruction using machine learning algorithms applied to Resistive Silicon Detectors (RSD) - Federico Siviero (Universita e INFN Torino (IT))

15:20 Acceptor removal and gain Reduction in proton and neutron irradiated LGADs - Evangelos - Gkougkousis (Conseil Europeen Recherche Nucl. (CERN)-Unknown-Unknown)

15:40 [US] Deep Junction LGAD: a new approach to high granularity LGAD - Yuzhan Zhao (University of California,Santa Cruz (US))

16:20 [US] Energy dependence of the acceptor removal by protons for several UFSD types - Hartmut Sadrozinski (University of California,Santa Cruz (US))

16:40 Discussion Session: LGAD - Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Friday 5 June 2020
11:00 CERN EP seminar: Innovative silicon sensors for future trackers - Nicolo Cartiglia (INFN Torino (IT))
CERN EP seminar: Innovative silicon sensors for future trackers
- Nicolo Cartiglia (INFN Torino (IT))
11:00 - 12:00
Abstract: Future particle trackers require formidable position (~5 microns) and time (~ 10 ps) resolutions. In traditional silicon sensors, better position resolution implies smaller pixels and, consequently, much higher channel count and smaller area available for the electronics. This combination is at odd with the requirement of also measuring accurately the timing information, a request that increases considerably the complexity of the readout and its power consumption. In this seminar, we will present a novel design of silicon detectors, the so-called Resistive Silicon Detector (RSD). RSD uses internal gain, a resistive n+ junction contact on a p-bulk, and AC readout to achieve signal sharing among several readout pads (somewhat similar to the RPC concept). This design leads to a drastic reduction of the number of read-out channels for equal spatial resolution while it maintains the excellent time performances of low gain silicon sensors. The RSD design (also called AC-LGAD) has a 100% fill factor and it is easily adapted to any geometry since the segmentation is achieved uniquely by the metal AC pads. In the first part of the seminar, we will present the challenges in the design and production of the first prototypes at FBK, while in the second part we will cover the signal formation, reconstruction techniques, and preliminary laboratory and beam test results. The last part of the seminar will focus on the plans for design optimization and the introduction of machine learning in the reconstruction to exploit the distributed nature of the signal.
13:00 CMOS
CMOS
13:00 - 16:00
Contributions

13:00 Radiation tolerant small-pixel passive CMOS sensors with RD53A readout - Yannick Manuel Dieter (University of Bonn (DE))

13:20 First tests and characterization of the RD50-MPW2 active pixel matrix, bandgap voltage reference and SEU tolerant memory - Ricardo Marco Hernandez (CERN)

13:40 A reconfigurable HR-CMOS sensor for Tracking, Pre-Shower and Digital Electromagnetic Calorimetry - Ioannis Kopsalis (University of Birmingham (GB))

14:00 Initial I-V and e-TCT measurements of a depleted CMOS sensor within the CERN-RD50 collaboration - Matthew Lewis Franks

14:50 Data acquisition system for the characterization of the RD50 HV-CMOS active pixel matrix prototypes - Christian Irmler (Austrian Academy of Sciences (AT))

15:10 [US] Effects of neutron irradiation on HV-JFETs - Gabriele Giacomini (Brookhaven National Laboratory (US))

15:30 Discussion on CMOS devices - Eva Vilella Figueras (University of Liverpool (GB))

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